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55000 05D15 88E11 TPS56300 CSNE33 B2005RU B2003RU SURFA
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  smd type ic www.kexin.com.cn 1 smd type ic tssop-8 unit: mm mos field effect transistor KPA1816 features 1.8v drive available low on-state resistance r ds(on)1 =15m typ. (v gs =-4.5v,i d =-4.5a) r ds(on)2 =16m typ. (v gs =-4.0v,i d =-4.5a) r ds(on)3 = 22.5 m typ. (v gs =-2.5v,i d =-4.5a) r ds(on)4 = 41.5 m typ. (v gs =-1.8v,i d =-2.5a) built-in g-s protection diode against esd absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage (v gs =0) v dss -12 v gate to source voltage (v ds =0) v gss 8.0 v drain current (dc) ta = 25 i d(dc) 9.0 a drain current (pulse) *1 i d (pulse) 36 a total power dissipation(2 unit) *2 p t 2.0 w channel temperature t ch 150 storage temperature t stg -55to+150 *1 pw 10 s, duty cycle 1% *2 mounted on ceramic substrate of 5000mm 2 x1.1 mm 1, 2, 3 : source 4: gate 5, 6, 7, 8: drain
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit zero gate voltage drain current i dss v ds =-12v,v gs =0 -1.0 a gate leakage current i gss v gs = 8v, v ds =0 10 a gate cut-off voltage v gs(off) v ds =-10v,i d =- 1 ma -0.45 -0.75 -1.5 v forward transfer admittance | y fs |v ds =-10v,i d = -4.5a 11 22 s r ds(on)1 v ds =- 4.5v, i d = -4.5 a 12.0 15 m r ds(on)2 v gs = -4.0v, i d = -4.5 a 12.5 16 m r ds(on)3 v gs = -2.5v, i d = -4.5 a 16.2 22.5 m r ds(on)4 v gs =-1.8v,i d = -2.5 a 23.7 41.5 m input capacitance c iss 1570 pf output capacitance c oss 400 pf reverse transfer capacitance c rss 240 pf turn-on delay time t d(on) 16 ns rise time t r 132 ns turn-off delay time t d(off) 223 ns fall time t f 295 ns total gate charge q g 15 nc gate to source charge q gs 3.0 nc gate to drain charge q gd 4.5 nc body diode forward voltage v f(s-d) i f =9.0a,v gs = 0 0.82 v reverse recovery time trr i f =9.0a,v gs = 0 v 490 ns reverse recovery charge qrr d i /d t = 100 a/ s 580 nc v ds =-10v,v gs =0,f=1mhz i d = -9.0a, v dd = -10v, v gs =-4.0v i d =-4.5a,v gs =-4.0v,v dd =-10 v,r g =10 drain to source on-state resistance KPA1816


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